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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 500 mAmpere APPLICATION * Relay driver * High speed line driver * Logic level transistor 2N7002ESEPT FEATURE * Small surface mounting type. (SOT-23) * High density cell design for low RDS(ON). * Suitable for high packing density. * Rugged and reliable. * High saturation current capability. * ESD protect in input gate 1.5KV (3) SC-70/SOT-323 (2) 1.30.1 0.30.1 0.65 2.00.2 0.65 CONSTRUCTION * N-Channel Enhancement with ESD protection in input 1.250.1 (1) 0.05~0.2 D 0.8~1.1 0~0.1 2.0~2.45 0.1Min. CIRCUIT 1G 3 S 2 TA = 25C unless otherwise noted Dimensions in millimeters SC-70/SOT-323 Absolute Maximum Ratings Symbol Parameter 2N7002ESEPT Units VDSS Drain-Source Voltage 60 60 V V V VDGR VGSS Drain-Gate Voltage (RGS < 1 M) Gate-Source Voltage - Continuous - Non Repetitive (tp < 50s) 20 40 500 800 400 -65 to 150 TA= 25C TA= 100C ID PD TJ,TSTG Maximum Drain Current - Continuous - Pulsed Maximum Power Dissipation mA mW C Operating and Storage Temperature Range Thermal characteristics RJA Thermal Resistance, Junction-to-Ambient 350 C/W 2006-03 RATING CHARACTERISTIC CURVES ( 2N7002ESEPT ) Electrical Characteristics T Symbol Parameter A = 25C unless otherwise noted Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate - Body Leakage, Forward Gate - Body Leakage, Reverse (Note 1) VGS = 0 V, ID = 10 A VDS = 48 V, VGS = 0 V TJ =150C VGS = 10 V, VDS = 0 V VGS = -15 V, VDS = 0 V 60 75 1.0 10 0.5 -0.5 V A uA uA uA ON CHARACTERISTICS VGS(th) RDS(ON) gFS Gate Threshold Voltage VDS = VGS, ID = 1.0 mA VGS = 5.0 V, ID = 50 mA 1 2.5 4.5 5.0 V Static Drain-Source On-Resistance VGS = 10 V, ID = 500 mA Forward Transconductance VDS = 10 V DS(on), ID = 200 m A 100 300 mS DYNAMIC CHARACTERISTICS Ciss Coss Crss ton toff Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time VDS = 10 V, VGS = 0 V, f = 1.0 MHz 13 8 4 3 9 40 30 10 10 15 pF VDD = 50 V, RL = 250 , VGS = 10 V, RGEN = 50 VDD = 50 V, RL = 250 , VGS = 10 V, RGEN = 50 nS nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS ISM VSD trr Qr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Recovery Charge VGS = 0 V, IS = 200 mA (Note 1) IS = 300 mA, dIS /dt=-100 A/uS VGS = 0 V, V DS = 25 V 0.85 30 30 300 1.2 1.5 mA A V nS nC Note: 1. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%. |
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